PHOTO-INDUCED DEFECTS IN SEMICONDUCTORS by David Redfield, Richard H. Bube ( 9780521461962 )

Item Details

Title:

PHOTO-INDUCED DEFECTS IN SEMICONDUCTORS

By:

David Redfield, Richard H. Bube

Format:

Hardback

List price:

£81.00

Our price:

£70.88

Discount:

12.5% off

You save:

£10.12

ISBN 10:

0521461960

ISBN 13:

9780521461962

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Publisher:

CAMBRIDGE UNIVERSITY PRESS

Pub. date:

26 January, 1996

Series:

Cambridge Studies in Semiconductor Physics and Microelectronic Engineering 4

Pages:

230

Description:

A thorough review of the properties of deep-level, localized defects in semiconductors.

Synopsis:

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Illustrations:

106 b/w illus.

Publication:

Imprint:

Cambridge University Press

Returns:

Returnable

Some other items by this author:

ELECTRONS IN SOLIDS (HB)

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PHOTOELECTRONIC PROPERTIES OF SEMICONDUCTORS (HB)